[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

[19p-Z25-3] Fabrication of recessed-gate AlGaN/GaN HEMTs utilizing contactless photoelectrochemical (CL-PEC) etching (2)

〇(DC)Masachika Toguchi¹, Kazuki Miwa¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Osamu Ichikawa², Ryota Isono², Takeshi Tanaka², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

Keywords:Photoelectrochemical, Etching, Nitride Semiconductor