[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

[19p-Z25-8] Performance of heterojunction transistor consisting of GaAs or InGaAs channel with electrons and holes induced by modulation doping

〇(M2)Hiroaki Ogawa¹, Mayu Toyohara¹, Keita Asaka¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

Keywords:superjunction, high breakdown voltage, heterojunction

We previously reported high breakdown characteristics for GaAs heterostructure superjunction diodes with a pair of channel-doped electrons and holes. For a lower on-resistance, we investigated modulation-doped devices consisting of AlGaAs barrier sandwiched with GaAs or InGaAs channel. The InGaAs channel transistor derived a 104 Ω·mm on-resistance with 23 µm gate-drain spacer. It also showed a 400 V high breakdown voltage. Compared with the channel-doped transistor, the developed InGaAs channel modulation-doped one can reduce the on-resistance with high breakdown voltage.