[19p-Z27-1~14] 15.4 III-V-group nitride crystals

△ [19p-Z27-13] Growth mechanism in high flow velocity growth of AlN

〇(B)Takumi Miyagawa¹, Shota Tuda¹, Reiya Aono¹, Yuya Ageta¹, Hideki Hirayama^2,3, Yusuke Takashima¹, Yosiki Naoi^1,2, Kentaro Nagamatu^1,2 (1.Tokushima Univ., 2.Tokushima Univ. pLED, 3.RIKEN)

Keywords:MOVPE, AlN, High flow velocity growth

The low growth rate and high dislocation densities are well known AlN growth with adduct formation between TMA and ammonia by metalorganic vapor phase epitaxy (MOVPE). In this study, we
simulated the growth mechanism for high velocity gas flow MOVPE with jet imitation flow by CFD simulation. It is shown that high velocity MOVPE is improved material efficiency compared with that of conventional MOVPE, TMA can be carried to growth region before vapor phase reaction.