[19p-Z27-1~14] 15.4 III-V-group nitride crystals

[19p-Z27-14] Reduction of parasitic reaction during the AlN growth by HT-MOVPE

〇Kentaro Nagamatsu^1,2, Shota Tsuda², Reiya Aono², Manabu Miyagawa², Yuuya Ageta², Hideki Hirayama^1,3, Yuusuke Takashima², Yoshiki Naoi^1,2 (1.Tokushima Univ. pLED, 2.Faculty of Science and Engineering, Tokushima Univ., 3.RIKEN)

Keywords:Deep ultra-violet light emitting diode, Crystal growth

Aluminum source (TMA) and Nitrogen source (NH3) is well known to form adduct in vapor phase reaction. In addition, this phenomenon become remarkable with increase growth temperature. Therefore, to realize high crystalline quality AlN, it is necessary to solve this problem. In this study, we achieved reduction of parasitic reaction at high temperature in AlN growth which is high gas flow velocity without turbulent flow by Jet engine imitation gas flow metalorganic vapor phase epitaxy.