1:30 PM - 1:45 PM
△ [19p-Z27-3] Crystal growth of high temperature AlN on AlN template
Keywords:MOVPE, AlN, high temperature growth
The typical epitaxial growth is important underling layer for reduce dislocation, because the growth layer dislocation is transfared from underling layer. It has been reported, dislocation tilt angle in AlGaN growth were determined strain, the dislocation densities are improved by formed loop. In this study, AlN were grown at the high temperature from 1200 to 1650℃ on the AlN template on sapphire. As a result, the dislocation densities were decrease with increase temperature.