Characterizations of impurity doping in GaN crystal for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

Naoki Sone; Yoshiya Miyamoto; Kazuma Ito; Shiori Yamamura; Yukimi Jinno; Sae Katsuro; Nanami Nakayama; Koji Okuno; Koichi Mizutani; Kazuyoshi Iida; Weifang Lu; satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-Z27-1~14] 15.4 III-V-group nitride crystals

Fri. Mar 19, 2021 1:00 PM - 5:00 PM Z27 (Z27)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo), Kenjiro Uesugi(Mie Univ.)

3:15 PM - 3:30 PM

[19p-Z27-9] Characterizations of impurity doping in GaN crystal for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

〇Naoki Sone^1,3, Yoshiya Miyamoto³, Kazuma Ito³, Shiori Yamamura³, Yukimi Jinno³, Sae Katsuro³, Nanami Nakayama³, Koji Okuno^2,3, Koichi Mizutani², Kazuyoshi Iida^2,3, Weifang Lu³, satoshi Kamiyama³, Tetsuya Takeuchi³, Motoaki Iwaya³, Isamu Akasaki^3,4 (1.KOITO MANUGACTRING Co., Ltd, 2.TOYODA GOSEI Co., Ltd, 3.Meijo university, 4.Nagoya university)

Keywords:nanowire, GaN