[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [19p-Z33-1] Digitalized Mist-Chemical Vapor Deposition of atomic-layer Molybdenum Disulfide (MoS₂) Flakes at Low Temperatures

〇(D)Abdul A Kuddus¹, Arifuzzaman Rajib¹, Shimomura Kazushi¹, Yokoyama Kojun¹, Keiji Ueno¹ (1.Saitama University)

Keywords:Mist-CVD, Transitional metal dichalcogenide, Molybdenum disulfide

In this work, to make a profound understanding and explore the nucleation and growth mechanism of mist-CVD fabricated MoS₂, a new controllable digitalized mist-CVD technique has been investigated systematically. Ammonium tetrathiomolybdate (NH₄)₂MoS₄ and N-methyl-2-pyrrolidone (NMP) was used as a precursor and solvent respectively. The prepared solution was supplied into the reaction tube sequentially for several tens of seconds for a different number of cycles with Ar as generation and carrier gas containing H₂ (25%) at furnace temperature of 400-600 °C. The fabrication of MoS₂ was performed on the precleaned SiO₂(90 nm)/Si substrate placed at the highest temperature region into the reaction tube. Finally, the sulfur treatment was executed for further improving the quality of the flakes at the temperature of 600 °C for 20 min. The experimental results reveal that the digitalized mist-CVD is much promising technique for the controlled fabrication of high-quality atomic-layer 2H-MoS₂ at low temperatures.