Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

Kohei Shima; Kentaro Furusawa; Shigefusa Chichibu

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

4:15 PM - 4:30 PM

△ [19p-Z33-11] Room-temperature cavity-polaritons in planar ZnO microcavities fabricated by a top-down process

〇Kohei Shima¹, Kentaro Furusawa¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

Keywords:ZnO, Microcavity, Cavity polariton

Angle-dependent energy shifts in the near-band edge emission peak were observed at room temperature in planar ZnO microcavities (MCs) fabricated by a top-down process that simultaneously maintains high radiative performance of a ZnO active layer and high reflectivity of wide-bandwidth distributed Bragg reflectors (DBRs). Angle-resolved photoluminescence spectra of the ZnO MCs measured at different positions exhibited distinct emission from the lower branch of cavity polaritons at room temperature.