The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

5:00 PM - 5:15 PM

△ [19p-Z33-13] Improvement of carrier density of p-type α-SnWO4 by thermal annealing in oxygen

〇(M1)Yuka Dobashi1, Naoto Kikuchi2, Makoto Minohara2, Akane Samizo1, Keishi Nishio1 (1.Tokyo Univ. Sci., 2.AIST)

Keywords:semiconducter, p-type oxide semiconducter, Sn based oxides