Takayoshi Oshima

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM

[20p-B203-8] Backside exposure photolithography for metal-masked β-Ga₂O₃ substrates

〇Takayoshi Oshima¹ (1.NIMS)

4:00 PM - 4:15 PM

[20p-B203-12] Selective area growth of β-Ga₂O₃ by HCl-based halide vapor phase epitaxy

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)