Atsuhiro Akiba

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM

[21a-M206-5] Analysis of near-interface trap density distribution in 4H-SiC MOSFETs by 3 level charge pumping characteristics

〇(M2)Atsuhiro Akiba¹, Yano Hiroshi¹ (1.Univ. of Tsukuba)