Ryusei Nonaka

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Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

10:45 AM - 11:00 AM

[23a-B204-7] Threshold voltage shift of GaN HEMT with high spontaneous polarized AlScN films

〇Ryusei Nonaka¹, Takuya Hosi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech School of Eng., 2.Tokyo Tech IIR)