11:45 〜 12:00 ▼ [20a-B104-11] Ar/N2-plasma nitridation process for the gate stack isolation to realize pentacene-based floating-gate memory utilizing N-doped LaB6 metal and high-k LaBxNy insulator 〇(D)EUNKI HONG1、Shun-ichiro Ohmi1 (1.Tokyo Inst. of Technology)