Naoki Kase

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 9:00 AM - 11:45 AM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:15 AM - 11:30 AM

[20a-B203-9] Control of the transport properties of the InGaO₃(ZnO)_n single crystals by the O₂ annealing effect

〇Naoki Kase¹, Tadahito Inoue¹, Yuto Uruma¹, Yusuke Kawamura¹, Fuyuki Kawakami¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. Sci.)