Ken Goto

Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM

[20p-B203-15] Comparison of β-Ga₂O₃ growth by metalorganic vapor phase epitaxy using triethylgallium and diethylgallium ethoxide

〇Ken Goto¹, Taro Nishimura¹, Haruka Tozato¹, Kazutada Ikenaga^1,2, Shogo Sasaki³, Masato Ishikawa⁴, Hideaki Machida⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO Corp., 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)