Hiroaki Hanafusa

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P04 (Arena)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 6:00 PM

[20p-P04-19] Study on low-temperature Si-dots formation on SiC by Silicon-cap annealing with a-Si:H layer

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)