Masanori Nagase

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P04 (Arena)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 6:00 PM

[20p-P04-6] Evaluation of nonvolatile memory characteristics of GaN/AlN resonant tunneling diodes fabricated on Si (111) substrate

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)