Yuya Tamamura

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P04 (Arena)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 6:00 PM

[20p-P04-7] Effects of defect levels in vicinity of GaN surface on C-V characteristics of MOS structure with Mg-doped p-GaN (2)

〇(M2)Yuya Tamamura¹, Takahide Nukariya¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)