9:45 AM - 10:00 AM
△ [21a-M206-4] Improved performance of 4H-SiC(0001) CMOS devices by post-nitridation treatment in CO2
〇Mizuki Kuniyoshi1,2, Kidist Moges1, Takuma Kobayashi1, Takuji Hosoi3, Takayoshi Shimura1, Keita Tachiki4, Tsunenobu Kimoto4, Heiji Watanabe1 (1.Osaka Univ., 2.ULVAC, Inc., 3.Kwansei Gakuin Univ., 4.Kyoto Univ.)