Asato Suzuki

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM

△ [21a-M206-9] Leakage current characteristics in NO-annealed SiC(1-100) MOS devices.

〇Asato Suzuki¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)