Tetsuo Hatakeyama

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 1:30 PM - 5:35 PM M206 (Multimedia Research Hall)

Symposium (Oral)
| Symposium
| Forefront of interface science and technology of wide bandgap semiconductor MOS devices

[21p-M206-1~9] Forefront of interface science and technology of wide bandgap semiconductor MOS devices

2:20 PM - 2:35 PM

[21p-M206-3] On the Dominant Scattering Mechanism of the Mobility in SiC MOSFETs

〇Tetsuo Hatakeyama¹, Hirohisa HIrai², MItsuru Sometani², Dai OKamoto¹, MItsuo Okamoto², Shinsuke Harada² (1.Toyama pref. Univ., 2.AIST)