Naoya Kishimoto

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Speaker, Author, Co-Author

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

4:45 PM - 5:00 PM

△ [22p-B204-13] 2.4 GHz Rectifier Characteristics of AlGaN/GaN HEMT Gated-Anode Diode for Microwave Wireless Power Transfer

〇Naoya Kishimoto¹, Yoichi Tuchiya¹, Debaleen Biswas¹, Qiang Ma¹, Yuji ando², Hidemasa takahashi², Akio Wakejima¹ (1.Nagoya Inst., 2.Nagoya Univ.)