Shuto Hattori

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Speaker, Author, Co-Author

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM

△ [22p-B204-3] Study of intermediate layer of SiO₂/GaN interface by first-principles calculation

〇(M1)Shuto Hattori¹, Atsushi Oshiyama², Kenji Shiraishi^2,1, Seiichi Miyazaki¹, Heiji Watanabe³, Katsunori Ueno⁴, Ryou Tanaka⁴, Tsurugi Kondou⁴, Shinya Takashima⁴, Masaharu Edo⁴ (1.Graduate School of Eng, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Eng, Osaka Univ., 4.Fuji Electric)