Ryo Tanaka

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Speaker, Author, Co-Author

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

2:15 PM - 2:30 PM

[22p-B204-4] Investigation of high-concentration p-type GaN by shallow implantation of Mg and N

〇Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Jun Uzuhashi², Tadakatsu Ohkubo², Jun Chen², Takashi Sekiguchi² (1.Fuji Electric, 2.NIMS)