Takuya Hoshi

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Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM

[23a-B204-1] MOCVD growth of C-doped GaAsSb on GaN with Surface Arsenide Layer

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)