Ryo Kagawa

→ Search for Ryo Kagawa in Google Scholar

Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM

[23a-B204-8] Fabrication of GaN/3C-SiC on-diamond HEMT structure for high output power devices

〇Ryo Kagawa¹, Naoteru Shigekawa², Jianbo Liang², Keisuke Kawamura³, Yoshiki Sakaida³, Sumito Ouchi³, Uratani Hiroki³, Yasuo Shimizu⁴, Yutaka Ohno⁴, Yusuke Nagai⁴ (1.Osaka City Univ., 2.Osaka Metropolitan Univ., 3.Air Water inc., 4.IMR Tohoku Univ.)

▲