Jun Tatebayashi

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Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:00 PM C200 (C200)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[23a-C200-1~11] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM

[23a-C200-4] Formation and optical characteristics of GaN:Eu/GaN nanowires with high aspect ratio grown by organometallic vapor phase epitaxy

Takuma Yoshimura¹, 〇Jun Tatebayashi^1,2, Takaya Otabara¹, Dolf Timmerman¹, Shuhei Ichikawa^1,3, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.QIQB, Osaka Univ., 3.UHVEM, Osaka Univ.)

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