Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20a-C200-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 9:00 AM - 12:00 PM C200 (C200)

Tomoyuki Tanikawa(Osaka Univ.), Takao Oto(Yamagata Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▼ [20a-C200-1] 【Highlighted Presentation】Structural analysis of N-polar InGaN layer grown on ScAlMgO₄ substrate without buffer layer

〇(DC)Mohammed Ali Najmi¹, Martin Velazquez-Rizo¹, Daisuke Iida¹, Pavel Kirilenko¹, Kazuhiro Ohkawa¹ (1.King Abdullah Univ.)

9:15 AM - 9:30 AM

▼ [20a-C200-2] Anodic corrosion of n-GaN in non-redox electrolytes

〇(DC)Artem Shushanian¹, Daisuke Iida¹, Yu Han¹, Kazuhiro Ohkawa¹ (1.KAUST)

9:30 AM - 9:45 AM

[20a-C200-3] MOVPE and wafer bowing of GaN on 2-inch ScAlMgO4 substrates

〇Takato Fukui¹, Taro Sakaguchi¹, Yoshinobu Matsuda¹, Makoto Matsukura², Takahiro Kojima², Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.OXIDE)

9:45 AM - 10:00 AM

[20a-C200-4] Design and fabrication of InGaN/GaN superlattice structures on ScAlMgO₄ substrates.

〇Taro Sakaguchi¹, Takato Fukui¹, Yoshinobu Matsuda¹, Makoto Matsukura², Takahiro Kojima², Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.OXIDE)

10:00 AM - 10:15 AM

[20a-C200-5] Investigation of Initial Growth of GaN Grown on ScAlMgO₄ Substrate by RF-MBE

〇Yuichi Wada¹, Yuya Kuroda¹, Naoki Goto¹, Takashi Fujii¹, Shinichiro Mouri¹, Momoko Deura², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO)

10:30 AM - 10:45 AM

[20a-C200-6] Effect of surface nitridation on growth of GaN on ScAlMgO₄ substrate by RF-MBE

〇Yuya Kuroda¹, Yuichi Wada¹, Naoki Goto¹, Takashi Fujii¹, Shinichiro Mouri¹, Momoko Deura², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO)

10:45 AM - 11:00 AM

[20a-C200-7] Development of non-contact and non-destructive electrical property measurement technology of GaN thin film on ScAlMgO₄ substrate using THz-TDSE

〇Hayato Watanabe¹, Dingding Wang¹, Yuya Kuroda¹, Naoki Goto¹, Takashi Fujii^1,3, Toshiyuki Iwamoto³, Deura Momoko², Mouri Shinichiro¹, Araki Tsutomu¹ (1.Col. of Sci. & Eng, Ritsumeikan Univ., 2.R-GIRO, Ritsumeikan Univ., 3.NIPPO PRECISION Co.Ltd.)

11:00 AM - 11:15 AM

[20a-C200-8] 【Highlighted Presentation】^{Growth of GaN films on ScAlMgO4 Substrate by HVPE(Ⅲ) GaN template on ScAlMgO₄ by MBE}

Kazuyuki Tadatomo^1,2, Ryo Inomoto¹, Narihito Okada², Shinichi Seiryu³, Momoko Deura⁴, Takashi Fujii⁴, Tsutomu Araki⁴, Kotaro Ishiji⁵, Yuji Shiraishi⁶, 〇Tsuguo Fukuda⁶ (1.Creators of New Value, 2.Grad. School of Sci. and Tech. for Innov., Yamaguchi Univ., 3.OTASJAPAN, 4.Ritsumeikan Univ., 5.SAGA-LS, 6.Fukuda Crystal Lab.)

11:15 AM - 11:30 AM

△ [20a-C200-9] Current-confinement blue LEDs formed by mist particle supply oxidation

〇Ruka Watanabe¹, Hiroki Matumoto¹, Tsuyoshi Nagasawa¹, Kenta Kobayashi¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹ (1.Meijo Univ.)

11:30 AM - 11:45 AM

[20a-C200-10] Fabrication of relaxed InGaN-based LEDs with an emission wavelength over 600 nm via PSD

〇Akito Takayama¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS, UTokyo)

11:45 AM - 12:00 PM

△ [20a-C200-11] Demonstration of Eu-doped GaN Red RCLED Using Conductive HfO₂/TiO₂ DBRs

〇Wataru Ichimiya¹, Shuhei Ichikawa^1,2, Shuhei Kobayashi¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Session information

[20a-C200-1~11] 15.4 III-V-group nitride crystals

▼ [20a-C200-1] 【Highlighted Presentation】Structural analysis of N-polar InGaN layer grown on ScAlMgO₄ substrate without buffer layer

▼ [20a-C200-2] Anodic corrosion of n-GaN in non-redox electrolytes

[20a-C200-3] MOVPE and wafer bowing of GaN on 2-inch ScAlMgO4 substrates

[20a-C200-4] Design and fabrication of InGaN/GaN superlattice structures on ScAlMgO₄ substrates.

[20a-C200-5] Investigation of Initial Growth of GaN Grown on ScAlMgO₄ Substrate by RF-MBE

[20a-C200-6] Effect of surface nitridation on growth of GaN on ScAlMgO₄ substrate by RF-MBE

[20a-C200-7] Development of non-contact and non-destructive electrical property measurement technology of GaN thin film on ScAlMgO₄ substrate using THz-TDSE

[20a-C200-8] 【Highlighted Presentation】^{Growth of GaN films on ScAlMgO4 Substrate by HVPE(Ⅲ) GaN template on ScAlMgO₄ by MBE}

△ [20a-C200-9] Current-confinement blue LEDs formed by mist particle supply oxidation

[20a-C200-10] Fabrication of relaxed InGaN-based LEDs with an emission wavelength over 600 nm via PSD

△ [20a-C200-11] Demonstration of Eu-doped GaN Red RCLED Using Conductive HfO₂/TiO₂ DBRs

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Session information

[20a-C200-1~11] 15.4 III-V-group nitride crystals

▼ [20a-C200-1] 【Highlighted Presentation】Structural analysis of N-polar InGaN layer grown on ScAlMgO4 substrate without buffer layer

▼ [20a-C200-2] Anodic corrosion of n-GaN in non-redox electrolytes

[20a-C200-3] MOVPE and wafer bowing of GaN on 2-inch ScAlMgO4 substrates

[20a-C200-4] Design and fabrication of InGaN/GaN superlattice structures on ScAlMgO4 substrates.

[20a-C200-5] Investigation of Initial Growth of GaN Grown on ScAlMgO4 Substrate by RF-MBE

[20a-C200-6] Effect of surface nitridation on growth of GaN on ScAlMgO4 substrate by RF-MBE

[20a-C200-7] Development of non-contact and non-destructive electrical property measurement technology of GaN thin film on ScAlMgO4 substrate using THz-TDSE

[20a-C200-8] 【Highlighted Presentation】Growth of GaN films on ScAlMgO4 Substrate by HVPE(Ⅲ) GaN template on ScAlMgO4 by MBE

△ [20a-C200-9] Current-confinement blue LEDs formed by mist particle supply oxidation

[20a-C200-10] Fabrication of relaxed InGaN-based LEDs with an emission wavelength over 600 nm via PSD

△ [20a-C200-11] Demonstration of Eu-doped GaN Red RCLED Using Conductive HfO2/TiO2 DBRs

Authenticate

▼ [20a-C200-1] 【Highlighted Presentation】Structural analysis of N-polar InGaN layer grown on ScAlMgO₄ substrate without buffer layer

[20a-C200-4] Design and fabrication of InGaN/GaN superlattice structures on ScAlMgO₄ substrates.

[20a-C200-5] Investigation of Initial Growth of GaN Grown on ScAlMgO₄ Substrate by RF-MBE

[20a-C200-6] Effect of surface nitridation on growth of GaN on ScAlMgO₄ substrate by RF-MBE

[20a-C200-7] Development of non-contact and non-destructive electrical property measurement technology of GaN thin film on ScAlMgO₄ substrate using THz-TDSE

[20a-C200-8] 【Highlighted Presentation】^{Growth of GaN films on ScAlMgO4 Substrate by HVPE(Ⅲ) GaN template on ScAlMgO₄ by MBE}

△ [20a-C200-11] Demonstration of Eu-doped GaN Red RCLED Using Conductive HfO₂/TiO₂ DBRs