Oral presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Tue. Sep 20, 2022 1:30 PM - 6:00 PM C401 (C401)

Toshihiro Nakaoka(Sophia Univ.), Ryuichi Ohta(NTT), Takayuki Hasegawa(Osaka Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-C401-1] Carrier relaxation dynamics in InGaN / GaN quantum dots

〇Kota Hasegawa¹, Yuichi Nakamura¹, Kazuki Kitami¹, Yuya Hirano¹, Atushi Takeuchi¹, Shulong Lu², Xue Zhang², Wenxian Yang² (1.Waseda Univ., 2.SINANO)

1:45 PM - 2:00 PM

[20p-C401-2] The effect of tunneling on spin relaxation process in type-II tunneling bi-quantum-well

〇Yuichi Nakamura¹, Kazuki Kitami¹, Kota Hasegawa¹, Yuya Hirano¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

2:00 PM - 2:15 PM

△ [20p-C401-3] Electron spin amplification dynamics in a tunnel coupling of dilute nitride GaNAs quantum well and InAs quantum dots; effects of the position of quantum well

〇Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

2:15 PM - 2:30 PM

△ [20p-C401-4] Population Manipulation with Chirped Pulses in InAs Quantum Dots Ensemble with Resonators

〇Kotaro Miyauchi^1,2, Yutaro Kinoshita^1,2, Yushiro Takahashi^1,2, Kouichi Akahane³, Junko Ishi-Hayase^1,2 (1.Keio Univ., 2.Keio CSRN, 3.NICT)

2:30 PM - 2:45 PM

[20p-C401-5] Temperature Characteristics of 1550nm-Band InAs/InGaAlAs Quantum Dot Lasers
with p-type Doping

〇Ryota Yabuki¹, Atsushi Matsumoto², Ryumi Katsuhara¹, Takumi Takahashi¹, Kouichi Akahane², HEINSALU Siim¹, Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Waseda University, 2.NICT)

2:45 PM - 3:00 PM

▲ [20p-C401-6] PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation/capping

〇(D)Hanif Mohammadi¹, Ronel Roca¹, Yuwei Zhang¹, Hyunju Lee¹, Naotaka Iwata¹, Yoshio Ohshita¹, Itaru Kamiya¹ (1.Toyota tech. inst.)

3:15 PM - 3:30 PM

▲ [20p-C401-7] Electron temperature in semiconductor double barrier thermionic cooling heterostructures

〇Xiangyu Zhu¹, Marc Bescond², Gerald Bastard³, Naomi Nagai¹, Kazuhiko Hirakawa^1,2 (1.IIS/INQIE,Univ. of Tokyo, 2.LIMMS-CNRS, 3.Ecole Normale Superieure)

3:30 PM - 3:45 PM

▲ [20p-C401-8] Direct observation of coherent energy exchange induced by the internal mode-coupling effect in MEMS beam resonators

〇Tianye Niu¹, Naomi Nagai¹, Ya Zhang³, Kazuhiko Hirakawa^1,2 (1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo, 3.TUAT)

3:45 PM - 4:00 PM

▲ [20p-C401-9] Elementary process of electromigration at metal nanocontacts:
- Joule heating vs kinetic energy transfer -

〇Tian Yue¹, Shaoqing Du³, Kazuhiko Hirakawa^1,2 (1.IIS, Univ.of Tokyo, 2.INQIE,Univ.of Tokyo, 3.SIMIT, CAS)

4:00 PM - 4:15 PM

▲ [20p-C401-10] Clarified scheme for obtaining 350K optical gain in 3~4THz GaAs/AlGaAs quantum cascade laser

〇WANG LI¹, Tsung-Tse LIN¹, Thomas Grange², Stefan Birner², Ke Wang^1,3, Hideki Hirayama¹ (1.RIKEN, 2.nextnano, Germany, 3.Nanjing University, China)

4:15 PM - 4:30 PM

[20p-C401-11] Towards Non-Equilibrium Quantum Transport Simulation of Interband Cascade Lasers with nextnano.NEGF

〇(D)Takuma Sato^1,2, Stefan Birner¹, Christian Jirauschek², Thomas Grange³ (1.nextnano GmbH, 2.Tech. Univ. Munich, 3.nextnano Lab)

4:45 PM - 5:00 PM

[20p-C401-12] Analysis of electric field dependence of luminescence properties and carrier transport in GaAs/AlAs asymmetric double quantum well superlattices

〇Ryuto Murohara¹, Seiryu Nishiyama¹, Naoki Ohtani¹, Makoto Hosoda², Kouichi Akahane³ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

5:00 PM - 5:15 PM

[20p-C401-13] Evaluation of ultrafast response by double-pulse pump-probe technique in a GaAs/AlAs multiple quantum well

〇Osamu Kojima^1,2, Ikuo Tamachi², Takashi Kita² (1.Chiba Inst. Tech., 2.Kobe Univ.)

5:15 PM - 5:30 PM

△ [20p-C401-14] SiGe Quantum-Dot Formation in Si-Oxide Film using Double Si⁺/Ge⁺ Hot Ion Implantation

〇Koki Murakawa¹, Takashi Aoki¹, Toshiyuki Samejima², Tomohisa Mizuno¹ (1.Kanagawa Univ., 2.Tokyo Univ. Agri. Tech.)

5:30 PM - 5:45 PM

[20p-C401-15] Spin-blockade at room temperature in Si tunnel FETs with the introduction of deep impurity levels

〇(PC)Yoshisuke Ban¹, Kimihiko Kato², Shota Iizuka², Shigenori Murakami², Koji Ishibashi¹, Satoshi Moriyama³, Takahiro Mori², Keiji Ono¹ (1.RIKEN, 2.AIST, 3.Tokyo Denki Univ.)

5:45 PM - 6:00 PM

[20p-C401-16] Modulation of the optical excitation of Er ions using surface acoustic wave

〇Ryuichi Ohta¹, Xuejun Xu¹, Tomohiro Inaba¹, Haruki Sanada¹, Atsushi Ishizawa¹, Takehiko Tawara², Katsuya Oguri¹, Hajime Okamoto¹ (1.NTT BRL, 2.Nihon Univ.)

Session information

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-C401-1] Carrier relaxation dynamics in InGaN / GaN quantum dots

[20p-C401-2] The effect of tunneling on spin relaxation process in type-II tunneling bi-quantum-well

△ [20p-C401-3] Electron spin amplification dynamics in a tunnel coupling of dilute nitride GaNAs quantum well and InAs quantum dots; effects of the position of quantum well

△ [20p-C401-4] Population Manipulation with Chirped Pulses in InAs Quantum Dots Ensemble with Resonators

[20p-C401-5] Temperature Characteristics of 1550nm-Band InAs/InGaAlAs Quantum Dot Lasers
with p-type Doping

▲ [20p-C401-6] PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation/capping

▲ [20p-C401-7] Electron temperature in semiconductor double barrier thermionic cooling heterostructures

▲ [20p-C401-8] Direct observation of coherent energy exchange induced by the internal mode-coupling effect in MEMS beam resonators

▲ [20p-C401-9] Elementary process of electromigration at metal nanocontacts:
- Joule heating vs kinetic energy transfer -

▲ [20p-C401-10] Clarified scheme for obtaining 350K optical gain in 3~4THz GaAs/AlGaAs quantum cascade laser

[20p-C401-11] Towards Non-Equilibrium Quantum Transport Simulation of Interband Cascade Lasers with nextnano.NEGF

[20p-C401-12] Analysis of electric field dependence of luminescence properties and carrier transport in GaAs/AlAs asymmetric double quantum well superlattices

[20p-C401-13] Evaluation of ultrafast response by double-pulse pump-probe technique in a GaAs/AlAs multiple quantum well

△ [20p-C401-14] SiGe Quantum-Dot Formation in Si-Oxide Film using Double Si⁺/Ge⁺ Hot Ion Implantation

[20p-C401-15] Spin-blockade at room temperature in Si tunnel FETs with the introduction of deep impurity levels

[20p-C401-16] Modulation of the optical excitation of Er ions using surface acoustic wave

Authenticate

Session information

[20p-C401-1~16] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

△ [20p-C401-3] Electron spin amplification dynamics in a tunnel coupling of dilute nitride GaNAs quantum well and InAs quantum dots; effects of the position of quantum well

△ [20p-C401-4] Population Manipulation with Chirped Pulses in InAs Quantum Dots Ensemble with Resonators

▲ [20p-C401-6] PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation/capping

▲ [20p-C401-7] Electron temperature in semiconductor double barrier thermionic cooling heterostructures

▲ [20p-C401-8] Direct observation of coherent energy exchange induced by the internal mode-coupling effect in MEMS beam resonators

▲ [20p-C401-9] Elementary process of electromigration at metal nanocontacts:- Joule heating vs kinetic energy transfer -

▲ [20p-C401-10] Clarified scheme for obtaining 350K optical gain in 3~4THz GaAs/AlGaAs quantum cascade laser

△ [20p-C401-14] SiGe Quantum-Dot Formation in Si-Oxide Film using Double Si+/Ge+ Hot Ion Implantation

Authenticate

▲ [20p-C401-9] Elementary process of electromigration at metal nanocontacts:
- Joule heating vs kinetic energy transfer -

△ [20p-C401-14] SiGe Quantum-Dot Formation in Si-Oxide Film using Double Si⁺/Ge⁺ Hot Ion Implantation