[22a-B102-1~6] 15.2 II-VI and related compounds

Thu. Sep 22, 2022 9:00 AM - 10:30 AM B102 (B102)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

▲ [22a-B102-1] Investigation on threading dislocation reduction in CdTe/Si epitaxial layer using post-growth patterning and annealing technique

〇Bal Singh Chaudhari¹, Yutaka Takagi¹, Ryo Okumura¹, Madan Niraula¹ (1.NITech)

9:15 AM - 9:30 AM

△ [22a-B102-2] Introduction of multi-cycle nucleation process for high quality ZnTe (110) thin film on sapphire substrate

〇(M2)Shotaro Kobayashi¹, Hayato Kawashima¹, Kota Sugimoto¹, Nan Su¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept.of.EE.&BS, 2.Waseda Univ. Lab.for Mat.Sci.&Tech.)

9:30 AM - 9:45 AM

[22a-B102-3] Improvement of the crystallinity and surface morphology of MBE grown SnTe films by introducing the ZnTe buffer layer

〇(M2)Nan Su¹, Shotaro Kobayashi¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of EE. & BS., 2.Waseda Univ. Inst. for Mat. Sci.& Tech.)

9:45 AM - 10:00 AM

[22a-B102-4] Theoretical analysis of MgSe/ZnCdSe resonant tunneling diodes on InP substrates and investigation for high performance

〇Kazuhiro Bamba¹, Ichirou Nomura¹ (1.Sophia Univ.)

10:00 AM - 10:15 AM

[22a-B102-5] Investigation of asymmetric double barrier structures in MgZnCdSe/ZnCdSe resonant tunneling diodes on InP substrates

〇(M2)Guancan Xie¹, Peijie Yang¹, Nomura Ichiro¹ (1.Sophia Univ.)

10:15 AM - 10:30 AM

▲ [22a-B102-6] Interface chemical reaction during MBE growth of MgF2 on Si depending on thermal processes: Towards a new growth technique for epitaxial MgSiN2

〇ZHEFU LIU¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

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