Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[22p-C200-1~15] 15.4 III-V-group nitride crystals

Thu. Sep 22, 2022 1:30 PM - 6:00 PM C200 (C200)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[22p-C200-1] Study of polarization induced p-type conductivity on a semipolar plane

〇Kimito Kamiya¹, Ryota Akaike¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM

△ [22p-C200-2] AlN mole fraction dependence of contact resistance in p-AlGaN layer

〇(M1)Hayata Takahata¹, Tomoaki Kachi¹, Rie Iwatsuki¹, Hisanori Ishiguro¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Kengo Nagata², Koji Okuno², Yoshiki Saito² (1.Meijo Univ., 2.TOYOTA GOSEI Co.Ltd)

2:00 PM - 2:15 PM

[22p-C200-3] Improvement of Injection Efficiency of 230nm band AlGaN LEDs by introducing Mg Modulation Doped p-Interlayer between EBL and Polarization Doped Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon)

2:15 PM - 2:30 PM

△ [22p-C200-4] Thickness dependence of polarization doped transparent p-contact layer on the efficiency of 230 nm far-UVC AlGaN LED

〇(M1C)Kou Sumishi^1,2, Noritoshi Maeda¹, Akira Endoh², Hiroki Fujishiro², Yasushi Iwaisako³, Hideki Hirayama¹ (1.Riken, 2.TUS, 3.Nippon Tungsten)

2:30 PM - 2:45 PM

[22p-C200-5] Improvement of External Quantum Efficiency of 230 nm band AlGaN LEDs by introducing Reduced Gradient Polarization Doped Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon)

3:00 PM - 3:30 PM

[22p-C200-6] [INVITED] Continuous-wave operation of deep-ultraviolet laser diodes

〇Maki Kushimoto¹, Ziyi Zhang^2,3, Akira Yoshikawa^2,3, Koji Aoto², Yoshio Honda², Leo Schowalter², Chiaki Sasaoka², Hiroshi Amano² (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Asahi Kasei corp.)

3:30 PM - 3:45 PM

[22p-C200-7] Effect of Mg doping in the core layer in AlGaN-based DUV LD structures

〇Yuri Itokazu^1,2, Noritoshi Maeda¹, Masafumi Jo¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

3:45 PM - 4:00 PM

[22p-C200-8] Growth of 280nm band AlGaN LD Structures with Reduced Gradient Polarization Doped p-Cladding Layer

〇(M1)Fumiya Chugenji^2,1, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

4:00 PM - 4:15 PM

[22p-C200-9] Mg Doping Management toward Lower Lasing Threshold Operation in 290 nm band AlGaN UVB LD Structures

〇Noritoshi Maeda¹, Hideki Hirayama¹ (1.RIKEN)

4:30 PM - 4:45 PM

△ [22p-C200-10] Investigation on improvement of carrier injection efficiency in AlGaN-based UV-B laser diodes

〇(M1)Ryosuke Kondo¹, Tomoya Omori¹, Ryota Hasegawa¹, Ayumu Yabutani¹, Eri Matsubara¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

4:45 PM - 5:00 PM

△ [22p-C200-11] Dielectric multilayer reflector for AlGaN-based UV-B laser diodes

〇Ayumu Yabutani¹, Ryota Hasegawa¹, Ryosuke Kondo¹, Eri Matsubara¹, Sho Iwayama^1,2, Yoshito Jin³, Tatsuya Matsumoto³, Masamitsu Toramaru³, Hironori Torii⁴, Daichi Imai¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.JSW, 4.JSW Afty)

5:00 PM - 5:15 PM

△ [22p-C200-12] Fabrication of vertical conduction AlGaN-based UV-B light-emitting devices by laser lift-off

〇(M1)Toma Nishibayashi¹, Tomoya Omori¹, Moe Shimokawa¹, Ayumu Yabutani¹, Ryota Hashegawa¹, Shyo Iwayama^1,2, Motoaki Iwaya¹, Tetuya Takeuchi¹, Satoshi Kamiyama¹, Kohei Miyoshi³, Koichi Naniwae³, Akihiro Yamaguchi⁴, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ., 3.Ushio Inc., 4.Seishin Trading)

5:15 PM - 5:30 PM

△ [22p-C200-13] Investigation of sapphire substrate separation by wet etching of AlGaN grown on AlN nanopillars

〇(M1)Eri Matsubara¹, Toma Nishibayashi¹, Ryota Hasegawa¹, Ryosuke Kondo¹, Yoshinori Imoto¹, Ryoya Yamada¹, Ryuichiro Sakakima¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeushi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

5:30 PM - 5:45 PM

△ [22p-C200-14] A blue laser diode with a bottom tunnel junction grown by MOVPE

〇(M1)Kodai Usui¹, Tetsurou Inagaki¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

5:45 PM - 6:00 PM

△ [22p-C200-15] Reduction of dislocation density in AlGaN fabricated on periodic AlN nanopillars

〇Ryota Hasegawa¹, Ayumu Yabutani¹, Ryosuke Kondo¹, Eri Matsubara¹, Sho Iwayama^1,2, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Hideto Miyake² (1.Meijo Univ., 2.Mie Univ.)

Session information