Noritoshi Maeda

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Speaker, Author, Co-Author

Thu. Sep 22, 2022 1:30 PM - 6:00 PM C200 (C200)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[22p-C200-1~15] 15.4 III-V-group nitride crystals

2:00 PM - 2:15 PM

[22p-C200-3] Improvement of Injection Efficiency of 230nm band AlGaN LEDs by introducing Mg Modulation Doped p-Interlayer between EBL and Polarization Doped Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon)

2:30 PM - 2:45 PM

[22p-C200-5] Improvement of External Quantum Efficiency of 230 nm band AlGaN LEDs by introducing Reduced Gradient Polarization Doped Layer

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon)

4:00 PM - 4:15 PM

[22p-C200-9] Mg Doping Management toward Lower Lasing Threshold Operation in 290 nm band AlGaN UVB LD Structures

〇Noritoshi Maeda¹, Hideki Hirayama¹ (1.RIKEN)