Improvement of Injection Efficiency of 230nm band AlGaN LEDs by introducing Mg Modulation Doped p-Interlayer between EBL and Polarization Doped Layer

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 22, 2022 1:30 PM - 6:00 PM C200 (C200)

Motoaki Iwaya(Meijo Univ.), Yoshio Honda(Nagoya Univ.), Maki Kushimoto(Nagoya Univ.)

2:00 PM - 2:15 PM

〇Noritoshi Maeda¹, Yukio Kashima¹, Eriko Matsuura¹, Yasushi Iwaisako², Hideki Hirayama¹ (1.RIKEN, 2.Nippon)

Keywords:AlGaN, LED, 230 nm band