[20a-A200-1~10] 17.3 Layered materials

△ [20a-A200-6] Characterizations of Reactive Sputtering Grown MoS₂ on Different Substrates

〇(D)Myeongok Kim^1,2, Nazmul Ahsan², Dangrong Xie^1,2, Abhishek Gupta^2,3, Yoshitaka Okada^1,2 (1.Eng. UTokyo, 2.RCAST UTokyo, 3.Grad. Arts & Sci. UTokyo)

Keywords:Reactive sputtering, MoS2, Substrate

This research studies the crystalline nature and the valence band maximum energy level of MoS₂ grown by reactive sputtering on various substrates. In our previous report, it was found that MoS₂ thin films made by reactive sputtering on polycrystalline or amorphous substrates grow in vertical orientation. This research found that similar vertical growth is also observed on Si and monocrystalline c-Al₂O₃ substrates. On the other hands, photoelectron yield measurement indicates that there is a dependence of ionization potential on the substrates. The exact reason behind the change in the valence band maximum is still under investigation, but this result insinuates the dependence of vertically aligned MoS₂ thin films’ optical and electronic properties on the substrate materials.