[20a-A406-1~9] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[20a-A406-9] Improvement of current drivability for metal S/D Ge n-MOSFET
by introduction of recessed channel structure (II)

〇(M2)Shingo Nasu¹, Dong Wang¹, Keisuke Yamamoto¹ (1.IGSES, Kyushu Univ)

Keywords:germanium, MOSFET