[20a-B104-1~11] 12.4 有機EL・トランジスタ

▼ [20a-B104-11] Ar/N₂-plasma nitridation process for the gate stack isolation to realize pentacene-based floating-gate memory utilizing N-doped LaB₆ metal and high-k LaB_xN_y insulator

〇(D)EUNKI HONG¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Technology)

キーワード：Floating-gate memory, Organic field-effect transistor, Ar/N2-plasma nitridation

The nitrogen-doped (N-doped) lanthanum hexaboride (LaB₆) is a useful metal with a low work function, low resistivity, and oxidation immunity. Previously, we have reported pentacene-based floating-gate Au/pentacene/N-doped LaB₆(Metal: M)/ LaB_xN_y (Insulator: I)/ N-doped LaB₆(M)/LaB_xN_y(I)/n⁺-Si(100) (Semiconductor: S) MIMIS memory without isolation of the device. In this study, we have investigated the Ar/N₂-plasma nitridation on the edge region of N-doped LaB₆ floating-gate (FG) after gate stack patterning. MW of 0.4 V was obtained under input pulse of ±3 V/100 µs for pentacene-based FG OFET memory.