[20a-B104-1~11] 12.4 Organic light-emitting devices and organic transistors

△ [20a-B104-7] Stability and Material Dependence of Semiconductor/Electrode Interface in Sharp Switching Organic Single-Crystal Thin-Film Transistors

〇(M2)Keito Murata¹, Gyo Kitahara¹, Toshiki Higashino², Satoru Inoue¹, Satoshi Matsuoka¹, Shunto Arai¹, Tatsuo Hasegawa¹ (1.U. Tokyo, 2.AIST)

Keywords:organic semiconductors, transistors, electrode interface

The carrier of a practical coplanar-type organic thin-film transistor conducts at the semiconductor/electrode/gate dielectric 2D interface, it is essential to construct an interface suitable for such conduction in order to improve the performance. In a recent years, by combining an organic semiconductor single crystal with high mobility and a lyophobic insulator, the construction of an ideal semiconductor/gate dielectric interface has been realized. In this presentation, we investigated the injection system from semiconductor material comparison and detailed microscopic measurement in order to stabilize and improve the efficiency of carrier injection at the semiconductors/electrode interface.