Fabrication of relaxed InGaN-based LEDs with an emission wavelength over 600 nm via PSD

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 9:00 AM - 12:00 PM C200 (C200)

Tomoyuki Tanikawa(Osaka Univ.), Takao Oto(Yamagata Univ.)

11:30 AM - 11:45 AM

〇Akito Takayama¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS, UTokyo)

Keywords:LED, InGaN, sputtering