[20a-C200-1~11] 15.4 III-V-group nitride crystals

△ [20a-C200-11] Demonstration of Eu-doped GaN Red RCLED Using Conductive HfO₂/TiO₂ DBRs

〇Wataru Ichimiya¹, Shuhei Ichikawa^1,2, Shuhei Kobayashi¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:DBR, GaN, Resonant Cavity LED

We have successfully fabricated GaN-based red LEDs with Eu-doped GaN (GaN:Eu) as the active layer. We have fabricated resonant cavity LEDs with n-type AlInN/GaN at the bottom of the GaN:Eu layer and SiO₂/ZrO₂ at the top as a distributed Bragg reflector (DBR), and have achieved enhanced red emission under current injection. In this study, instead of dielectric SiO₂/ZrO₂ DBR, we have adapted HfO₂/TiO₂ DBR, which shows electrical conductivity through a electrical breakdown process to simplify the fabrication process. Moreover, we observed the enhancement of red emission intensity under current injection.