[20a-C200-1~11] 15.4 III-V-group nitride crystals

[20a-C200-7] Development of non-contact and non-destructive electrical property measurement technology of GaN thin film on ScAlMgO₄ substrate using THz-TDSE

〇Hayato Watanabe¹, Dingding Wang¹, Yuya Kuroda¹, Naoki Goto¹, Takashi Fujii^1,3, Toshiyuki Iwamoto³, Deura Momoko², Mouri Shinichiro¹, Araki Tsutomu¹ (1.Col. of Sci. & Eng, Ritsumeikan Univ., 2.R-GIRO, Ritsumeikan Univ., 3.NIPPO PRECISION Co.Ltd.)

Keywords:THz-TDSE, GaN, ScAlMgO4

As a substrate for the growth of gallium nitride (GaN), ScAlMgO₄ (SAM) is attracting attention. We grow a GaN thin film of about 1 μm on a SAM substrate as a template by the RF-MBE method, and then use a thickness of the mm order. We are aiming to fabricate GaN free-standing substrates that have grown GaN HVPE. However, the time resolution of the THz-TDSE instrument we used is about 0.01 ps, the GaN layer surface and GaN/SAM of about 1 μm corresponds to the time difference of the reflected wave from the interface. Therefore, this time, we investigate whether the film thickness and electrical characteristics of a GaN template with a thickness of about 1 μm can be evaluated by THz-TDSE.