[20a-C200-1~11] 15.4 III-V-group nitride crystals

[20a-C200-8] 【Highlighted Presentation】^{Growth of GaN films on ScAlMgO4 Substrate by HVPE(Ⅲ) GaN template on ScAlMgO₄ by MBE}

Kazuyuki Tadatomo^1,2, Ryo Inomoto¹, Narihito Okada², Shinichi Seiryu³, Momoko Deura⁴, Takashi Fujii⁴, Tsutomu Araki⁴, Kotaro Ishiji⁵, Yuji Shiraishi⁶, 〇Tsuguo Fukuda⁶ (1.Creators of New Value, 2.Grad. School of Sci. and Tech. for Innov., Yamaguchi Univ., 3.OTASJAPAN, 4.Ritsumeikan Univ., 5.SAGA-LS, 6.Fukuda Crystal Lab.)

Keywords:ScAlMgO4, MBE, HVPE

Using a GaN template that was grown directly on the SAM substrate by the MBE without a low-temperature buffer layer, the process from direct GaN growth on the SAM substrate to reuse of the SAM substrate was investigated.