[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-8] Dislocation density analysis of β-Ga₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi², Taketoshi Tomida², Kei Kamada², Yongzhao Yao³, Satoshi Nakano⁴, Akira Yoshikawa⁵ (1.NICHe, Tohoku Univ., 2.C&A Co., 3.JFCC, 4.RIAM, Kyushu Univ., 5.IMR, Tohoku Univ.)

Keywords:Ga2O3, simulation, dislocation

We studied numerical study of dislocation density by three dimensional and time dependent analysis using the Alexander–Haasen model to estimate growth direction dependence of plastic deformation of β-Ga2O3 single crystals during crystal growth process. The direction of crystal growth was set to [010], [-201], [-204], [001] axes.