Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 20, 2022 9:00 AM - 12:00 PM C202 (C202)

Hidetoshi Suzuki(Miyazaki Univ.), Kazuhisa Torigoe(SUMCO)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-C202-1] Temperature variation of photoluminescence from heavily Cr doped ruby

〇(M1)Ami Hitomi¹, Toru Katsumata^1,2, Hiroaki Aizawa¹ (1.Toyo Univ., 2.Toyo Inst.)

9:15 AM - 9:30 AM

[20a-C202-2] Surface structures of vicinal 4H-SiC m-surfaces

〇(M2)Shintaro Murase¹, Kohei Fukuma¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyusyu Univ.)

9:30 AM - 9:45 AM

△ [20a-C202-3] Mechanisms of crack generation and suppression in hetero growth of strain-induced semiconductor thin films

〇Youya Wagatsuma¹, Rena Kanesawa¹, Alam Md. Mahfuz^1,2, Kazuya Okada¹, Takahiro Inoue¹, Michihiro Yamada³, Kohei Hamaya^3,4, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ.)

9:45 AM - 10:00 AM

[20a-C202-4] Observation of Dislocation in Ge Single Crystal Substrates by X-ray Topography Using the Superbolman Effect

〇Yusuke Ito¹, Kenta Takatsu¹, Yoshiyuki Tsusaka¹, Jyunji Matsui² (1.Univ. of Hyogo, 2.Nano-Tech.Lab)

10:00 AM - 10:15 AM

[20a-C202-5] Identification of Dislocation Characteristics ZnO substrates by Means of Bright-Field X-ray Topography

〇Yusuke Namioka¹, Yusuke Ito¹, Daiki Hayase¹, Yuichi Ota², Yoshiyuki Tsusaka¹ (1.Univ. of Hyogo, 2.TIRI)

10:15 AM - 10:30 AM

[20a-C202-6] X-ray topographic observation of defect structure in ScAlMgO₄ cross-section wafer

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Yuji Shiraishi³, Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

10:45 AM - 11:00 AM

[20a-C202-7] Dislocation density analysis of Al₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi², Taketoshi Tomida², Satoshi Nakano³, Akira Yoshikawa⁴ (1.NICHe, Tohoku Univ., 2.C&A Co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-C202-8] Dislocation density analysis of β-Ga₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi², Taketoshi Tomida², Kei Kamada², Yongzhao Yao³, Satoshi Nakano⁴, Akira Yoshikawa⁵ (1.NICHe, Tohoku Univ., 2.C&A Co., 3.JFCC, 4.RIAM, Kyushu Univ., 5.IMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[20a-C202-9] Insight into dislocation generation at Σ3 grain boundaries in cast-grown silicon ingots

〇Yutaka Ohno¹, Hideto Yoshida², Tatsuya Yokoi³, Katsuyuki Matsunaga³, Koji Inoue¹, Yasuyoshi Nagai¹, Noritaka Usami³ (1.IMR, Tohoku Univ., 2.SANKEN, Osaka Univ., 3.GSE, Nagoya Univ.)

11:30 AM - 11:45 AM

[20a-C202-10] Stress analysis of multicrystalline Si with artificial grain boundaries and
evaluation of dislocation cluster distribution

〇Haruki Tajika¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Hiroyuki Tanaka¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN., 3.Graduate School of Info., Nagoya Univ.)

11:45 AM - 12:00 PM

[20a-C202-11] Ingot-scale and crystal-orientation-based analysis on growth dynamics of multicrystalline silicon

〇(P)Takuto Kojima¹, Kyoka Hara², Kentaro Kutsukake³, Tetsuya Matsumoto¹, Hiroaki Kudo¹, Noritaka Usami² (1.Grad. Info. Nagoya Univ., 2.Grad. Eng. Nagoya Univ., 3.AIP RIKEN)

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