[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-10] Stress analysis of multicrystalline Si with artificial grain boundaries and
evaluation of dislocation cluster distribution

〇Haruki Tajika¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Hiroyuki Tanaka¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN., 3.Graduate School of Info., Nagoya Univ.)

Keywords:dislocation cluster, multicrystalline Si