[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-2] Formation of Silicon Vacancies in 4H-SiC by High Energy Electron Irradiation

〇Shu Motoki^1,2, Shin-ichiro Sato², Seiichi Saiki², Koichi Murata³, Yuta Masuyama², Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.CRIEPI)

Keywords:Silicon Vacancy, Electron Spin Resonance, Optically Detected Magnetic Resonance