[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [20a-C306-4] Electrical detection of nuclear spin via silicon vacancy in 4H-SiC at room temperature

〇(D)Tetsuri Nishikawa¹, Naoya Morioka^1,2, Hiroshi Abe³, Hiroki Morishita^1,2, Takeshi Ohshima³, Norikazu Mizuochi^1,2 (1.Kyoto Univ., 2.CSRN, 3.QST)

Keywords:silicon vacancy, PDMR, ENDOR

To develop the electrically-driven quantum information and sensing device with spin-active color centers in wide-bandgap semiconductors, we demonstrate the electrical detection of the spin state of negatively-charged silicon vacancy in 4H-SiC and its interaction with neighbor nuclear spins by frequency-swept photocurrent detected magnetic resonance. In addition, by combining an electron-nuclear double resonance technique, we achieve the electrical observation of nuclear spins via electron spin of silicon vacancies at room temperature. In this presentation, we report the details.