10:00 AM - 10:15 AM
[20a-C306-5] Simultaneous Lateral Epitaxy of 3C-SiC and 4H-SiC
Keywords:SiC, Hetero-Epitaxy, Coherent interface
In order to reduce the channel resistance and to improve the reliability of gate oxide of SiC MOSFETs, we attempted to grow 3C-SiC(111) and 4H-SiC(0001) simultaneously. To suppress the twin crystal formation in the 3C-SiC epitaxial layer, (1) a specific cubic close packed structure on 4H-SiC(0001) surface was generated prior to the epitaxial growth, (2) the nucleation-site of 3C-SiC was specified at a predetermined area, then (3) 3C-SiC and 4H-SiC layers were epitaxially grown along the basal plane, this process is named as "simultaneous lateral epitaxy (SLE)".
The surface of SiC grown by SLE was observed by SEM and EBSD. The observation revealed the following facts: (1) The boundary between 3C-SiC(111) and 4H-SiC(0001) layers corresponds to a coherent interface along the basal plane. (2) The coherent interface exposes on the epitaxial SiC surface so as to separete 3C-SiC and 4H-SiC surfaces in the [1-100] orientation. (3) The 3C-SiC includes no twin crystal.
The surface of SiC grown by SLE was observed by SEM and EBSD. The observation revealed the following facts: (1) The boundary between 3C-SiC(111) and 4H-SiC(0001) layers corresponds to a coherent interface along the basal plane. (2) The coherent interface exposes on the epitaxial SiC surface so as to separete 3C-SiC and 4H-SiC surfaces in the [1-100] orientation. (3) The 3C-SiC includes no twin crystal.