[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-6] Reduction of dislocation density of SiC grown by High Temperature Chemical Vapor Deposition (HTCVD) Method

〇Akiyoshi Horiai¹, Hideyuki Uehigashi¹, Takahiro Kanda¹, Takashi Kanemura¹, Norihiro Hoshino², Isaho Kamata², Kiyoshi Betsuyaku², Hidekazu Tsuchida² (1.MIRISE technologies Corporation, 2.Central Research Institute of Electric Power Industry)

Keywords:High Temperature Chemical Vapor Deposition, basal plane dislocation, SiC ingot

In order to popularize SiC power devices, it is necessary to improve the quality and cost of SiC wafers. We are developing a SiC ingot manufacturing technology by High Temperature Chemical Vapor Deposition (HTCVD) Method, which enables high-speed growth by increasing the supply of high-purity gas at high temperature. In this study, we investigate the factors that affect the BPD density of SiC wafers made by HTCVD method, and report the results of making low BPD density SiC wafers.