[20p-A200-1~11] Past, current, and future of hexagonal BN

[20p-A200-5] Application of hexagonal boron nitride for diamond field-effect transistors

〇Takahide Yamaguchi^1,2 (1.NIMS, 2.Univ. of Tsukuba)

Keywords:hexagonal boron nitride, diamond, field-effect transistor

Diamond is a wide-bandgap semiconductor with excellent characteristics suitable for power electronics and communications applications. In this presentation, I will present the progress of our work on diamond field-effect transistors with a hexagonal boron nitride gate insulator.