[20p-A406-1~13] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[20p-A406-8] Evaluation of Poly-Si Gate Electrode CVD Using Trisilane for Minimal Fab System

〇Tetsuya Goto¹, Seiji Kobayashi², Thai Quoc Cuong², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.NICHe, Tohoku Univ., 2.Kotec, 3.Seinan, 4.AIST, 5.Minimal)

Keywords:Poly-Si, Minimal, trisilane

We developed poly-Si CVD equipment for Minimal Fab System. Liquid gas source of trisilane was used as precursor gas, because the liquid gas source can be practically installed in the minimal equipment. Poly-Si film with a crystallinity of 100% could be obtained at 710 oC. Using this poly-Si film as a gate electrode, MOS capacitor with good breakdown voltage could be obtained.